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august 2007 rev 1 1/14 14 STGW50NC60W n-channel 600v - 55a - to-247 ultra fast switching powermesh? igbt www.st.com features very high frequency operation low c res / c ies ratio (no cross-conduction susceptibility) applications very high frequency inverters, ups hf, smps and pfc in both hard switch and resonant topologies motor drivers welding description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh? igbts, with outstanding performances. the suffix ?w? identifies a family optimized for very high frequency applications. figure 1. internal schematic diagram type v ces v ce(sat) (max)@25c i c @100c STGW50NC60W 600v < 2.6v 55a to-247 1 2 3 table 1. device summary order code marking package packaging STGW50NC60W gw50nc60w to-247 tube
contents STGW50NC60W 2/14 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STGW50NC60W electrical ratings 3/14 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v gs = 0) 600 v i c (1) 1. calculated according to the iterative formula: collector current (continuous) at t c = 25c 100 a i c (1) collector current (continuous) at t c = 100c 55 a i cl (2) 2. v clamp = 480v, t j =150c, r g =10 ? , v ge =15v turn-off soa minimum current 250 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25c 285 w t j operating junction temperature -55 to 150 c table 2. thermal resistance symbol parameter value unit rthj-case thermal resistance junction-case max igbt 0.45 c/w rthj-amb thermal resistance junction-ambient max 50 c/w i c t c () t jmax t c ? r thj c ? v cesat max () t c i c , () ------------------------------------------------------------------------------------------------------ =
electrical characteristics STGW50NC60W 4/14 2 electrical characteristics (t case =25c unless otherwise specified) table 3. static symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 1ma, v ge = 0 600 v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 40a v ge = 15v, i c =40a,tc=125c 2.1 1.9 2.6 v v v ge(th) gate threshold voltage v ce = v ge , i c = 250a 3.75 5.75 v i ces collector cut-off current (v ge = 0) v ce = max rating,t c = 25c v ce = max rating,t c = 125c 500 5 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20v, v ce = 0 100 na g fs forward transconductance v ce = 15v , i c =40a 25 s table 4. dynamic symbol parameter test cond itions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25v, f = 1mhz, v ge = 0 4700 410 90 pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 390v, i c = 40a, v ge = 15v, figure 16 195 32 82 nc nc nc
STGW50NC60W electrical characteristics 5/14 table 5. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390v, i c = 40a r g = 10 ? , v ge = 15v 52 17 2400 ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390v, i c = 40a r g = 10 ? , v ge = 15v, tj = 125c 50 19 2020 ns ns a/s t r(voff) t d(voff) t f off voltage rise time turn-off delay time current fall time v cc = 390v, i c = 40a r g = 10 ? , v ge = 15v, 31 240 35 ns ns ns t r(voff) t d(voff) t f off voltage rise time turn-off delay time current fall time v cc = 390v, i c = 40a r g = 10 ? , v ge = 15v, tj = 125c 59 280 63 ns ns ns table 6. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit e on e off (1) e ts 1. turn-off losses include also the tail of the collector current turn-on switching losses turn-off switching losses total switching losses v cc = 390v, i c = 40a r g = 10 ? , v ge = 15v, figure 15 365 560 925 470 790 1260 j j j e on e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 390v, i c = 40a r g = 10 ? , v ge = 15v, tj = 125c figure 15 635 910 1545 j j j
electrical characteristics STGW50NC60W 6/14 2.1 electrical characteristics (curves) figure 1. output characteristics figure 2. transfer characteristics figure 3. transconductance figure 4. collector-emitter on voltage vs temperature
STGW50NC60W electrical characteristics 7/14 figure 5. gate charge vs gate-source voltage figure 6. capacitance variations figure 7. normalized gate threshold voltage vs temperature figure 8. collector-emitter on voltage vs collector current figure 9. normalized breakdown voltage vs temperature figure 10. switching losses vs temperature
electrical characteristics STGW50NC60W 8/14 figure 11. switching losses vs gate resistance figure 12. switching losses vs collector current figure 13. turn-off soa figure 14. i c vs. frequency
STGW50NC60W electrical characteristics 9/14 2.2 frequency applications for a fast igbt suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is report ed. that frequency is defined as follows: f max = (p d - p c ) / (e on + e off ) the maximum power dissipation is limited by maximum junction to case thermal resistance: equation 1 p d = ? t / r thj-c considering ? t = t j - t c = 125 c- 75 c = 50c the conduction losses are: equation 2 p c = i c * v ce(sat) * with 50% of duty cycle, v cesat typical value @125c. power dissipation during on & off commutations is due to the switching frequency: equation 3 p sw = (e on + e off ) * freq. typical values @ 125c for switching losses are used (test conditions: v ce = 390v, v ge = 15v, r g = 10 ohm). furthermore, diode recovery energy is included in the e on (see note 2), while the tail of the colle ctor current is included in the e off measurements (see note 3).
test circuit STGW50NC60W 10/14 3 test circuit figure 15. test circuit for inductive load switching figure 16. gate charge test circuit
STGW50NC60W package mechanical data 11/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STGW50NC60W 12/14 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
STGW50NC60W revision history 13/14 5 revision history table 7. document revision history date revision changes 24-aug-2007 1 initial release.
STGW50NC60W 14/14 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2007 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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